Unique short-circuit failure mechanisms in 1.2-kV SiC planar MOSFETs
This study clarified a unique failure mechanism in 1.2-kV SiC planar MOSFETs during short-circuit transients at 400-V DC bias in which molten Si penetrated cracks in the gate interlayer dielectric that were generated by mechanical stress, resulting in the shorting of the gate-source electrodes. In a...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2024-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/ad9980 |
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| author | Kazuhiro Suzuki Kaito Kashimura Hiroshi Yano Noriyuki Iwamuro |
| author_facet | Kazuhiro Suzuki Kaito Kashimura Hiroshi Yano Noriyuki Iwamuro |
| author_sort | Kazuhiro Suzuki |
| collection | DOAJ |
| description | This study clarified a unique failure mechanism in 1.2-kV SiC planar MOSFETs during short-circuit transients at 400-V DC bias in which molten Si penetrated cracks in the gate interlayer dielectric that were generated by mechanical stress, resulting in the shorting of the gate-source electrodes. In addition, the study found that the molten Si came from the poly-Si gate during the short-circuit transients. Since the latest planar SiC MOSFETs have superior specific on-resistances, the peak drain current density during short-circuit transients is higher, so greater heat generation occurs, resulting in the poly-Si gate reaching its melting point. |
| format | Article |
| id | doaj-art-e596d64dd24d4fe39ceaeca5a3d93e6c |
| institution | OA Journals |
| issn | 1882-0786 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-e596d64dd24d4fe39ceaeca5a3d93e6c2025-08-20T02:34:46ZengIOP PublishingApplied Physics Express1882-07862024-01-01171212400210.35848/1882-0786/ad9980Unique short-circuit failure mechanisms in 1.2-kV SiC planar MOSFETsKazuhiro Suzuki0Kaito Kashimura1Hiroshi Yano2https://orcid.org/0000-0001-7241-7014Noriyuki Iwamuro3https://orcid.org/0000-0002-5027-4718Graduate School of Pure and Applied Sciences, University of Tsukuba , Tsukuba, Ibaraki 305-8573, JapanGraduate School of Pure and Applied Sciences, University of Tsukuba , Tsukuba, Ibaraki 305-8573, JapanGraduate School of Pure and Applied Sciences, University of Tsukuba , Tsukuba, Ibaraki 305-8573, JapanGraduate School of Pure and Applied Sciences, University of Tsukuba , Tsukuba, Ibaraki 305-8573, JapanThis study clarified a unique failure mechanism in 1.2-kV SiC planar MOSFETs during short-circuit transients at 400-V DC bias in which molten Si penetrated cracks in the gate interlayer dielectric that were generated by mechanical stress, resulting in the shorting of the gate-source electrodes. In addition, the study found that the molten Si came from the poly-Si gate during the short-circuit transients. Since the latest planar SiC MOSFETs have superior specific on-resistances, the peak drain current density during short-circuit transients is higher, so greater heat generation occurs, resulting in the poly-Si gate reaching its melting point.https://doi.org/10.35848/1882-0786/ad9980SiC MOSFETlow on-resistancehigh peak currentshort-circuit failuremelting of poly-Si gategate-source shorting |
| spellingShingle | Kazuhiro Suzuki Kaito Kashimura Hiroshi Yano Noriyuki Iwamuro Unique short-circuit failure mechanisms in 1.2-kV SiC planar MOSFETs Applied Physics Express SiC MOSFET low on-resistance high peak current short-circuit failure melting of poly-Si gate gate-source shorting |
| title | Unique short-circuit failure mechanisms in 1.2-kV SiC planar MOSFETs |
| title_full | Unique short-circuit failure mechanisms in 1.2-kV SiC planar MOSFETs |
| title_fullStr | Unique short-circuit failure mechanisms in 1.2-kV SiC planar MOSFETs |
| title_full_unstemmed | Unique short-circuit failure mechanisms in 1.2-kV SiC planar MOSFETs |
| title_short | Unique short-circuit failure mechanisms in 1.2-kV SiC planar MOSFETs |
| title_sort | unique short circuit failure mechanisms in 1 2 kv sic planar mosfets |
| topic | SiC MOSFET low on-resistance high peak current short-circuit failure melting of poly-Si gate gate-source shorting |
| url | https://doi.org/10.35848/1882-0786/ad9980 |
| work_keys_str_mv | AT kazuhirosuzuki uniqueshortcircuitfailuremechanismsin12kvsicplanarmosfets AT kaitokashimura uniqueshortcircuitfailuremechanismsin12kvsicplanarmosfets AT hiroshiyano uniqueshortcircuitfailuremechanismsin12kvsicplanarmosfets AT noriyukiiwamuro uniqueshortcircuitfailuremechanismsin12kvsicplanarmosfets |