Unique short-circuit failure mechanisms in 1.2-kV SiC planar MOSFETs
This study clarified a unique failure mechanism in 1.2-kV SiC planar MOSFETs during short-circuit transients at 400-V DC bias in which molten Si penetrated cracks in the gate interlayer dielectric that were generated by mechanical stress, resulting in the shorting of the gate-source electrodes. In a...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2024-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/ad9980 |
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