A Reinforcement-Learning Based Approach for Designing High-Voltage SiC MOSFET Guard Rings

A Reinforcement-Learning Based Approach for Designing High-Voltage SiC MOSFET Guard Rings

For high-power silicon carbide (SiC) devices, breakdown voltage analysis is an important parameter, especially for guard ring design. This work explores the implementation of machine learning on SiC guard ring parameters such as ion implanted dose and energy. In this work, the reinforcement learning...

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Bibliographic Details
Main Authors: Tejender Singh Rawat, Chia-Lung Hung, Yi-Kai Hsiao, Wei-Chen Yu, Surya Elangovan, Wei-Ting Lin, Yi-Rong Lin, Kai-Lin Yang, Nien-Yi Jan, Yung-Hui Li, Hao-Chung Kuo
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Open Journal of Power Electronics
Subjects:
Breakdown voltage
machine learning
power device
reinforcement learning
SiC guard ring design
Online Access:https://ieeexplore.ieee.org/document/10752388/
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https://ieeexplore.ieee.org/document/10752388/

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