A Reinforcement-Learning Based Approach for Designing High-Voltage SiC MOSFET Guard Rings
For high-power silicon carbide (SiC) devices, breakdown voltage analysis is an important parameter, especially for guard ring design. This work explores the implementation of machine learning on SiC guard ring parameters such as ion implanted dose and energy. In this work, the reinforcement learning...
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Main Authors: | , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2024-01-01
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Series: | IEEE Open Journal of Power Electronics |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10752388/ |
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