The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO<sub>2</sub>/SiO<sub>2</sub> Double-Layer
We report on a procedure for extracting the SPICE model parameters of a RADFET sensor with a dielectric HfO<sub>2</sub>/SiO<sub>2</sub> double-layer. RADFETs, traditionally fabricated as PMOS transistors with SiO<sub>2</sub>, are enhanced by incorporating high-k d...
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2025-01-01
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| author | Miloš Marjanović Stefan D. Ilić Sandra Veljković Nikola Mitrović Umutcan Gurer Ozan Yilmaz Aysegul Kahraman Aliekber Aktag Huseyin Karacali Erhan Budak Danijel Danković Goran Ristić Ercan Yilmaz |
| author_facet | Miloš Marjanović Stefan D. Ilić Sandra Veljković Nikola Mitrović Umutcan Gurer Ozan Yilmaz Aysegul Kahraman Aliekber Aktag Huseyin Karacali Erhan Budak Danijel Danković Goran Ristić Ercan Yilmaz |
| author_sort | Miloš Marjanović |
| collection | DOAJ |
| description | We report on a procedure for extracting the SPICE model parameters of a RADFET sensor with a dielectric HfO<sub>2</sub>/SiO<sub>2</sub> double-layer. RADFETs, traditionally fabricated as PMOS transistors with SiO<sub>2</sub>, are enhanced by incorporating high-k dielectric materials such as HfO<sub>2</sub> to reduce oxide thickness in modern radiation sensors. The fabrication steps of the sensor are outlined, and model parameters, including the threshold voltage and transconductance, are extracted based on experimental data. Experimental setups for measuring electrical characteristics and irradiation are described, and a method for determining model parameters dependent on the accumulated dose is provided. A SPICE model card is proposed, including parameters for two dielectric thicknesses: (30/10) nm and (40/5) nm. The sensitivities of the sensors are 1.685 mV/Gy and 0.78 mV/Gy, respectively. The model is calibrated for doses up to 20 Gy, and good agreement between experimental and simulation results validates the proposed model. |
| format | Article |
| id | doaj-art-c7aa23650f8c4fd6a9583fbb6f33725f |
| institution | Kabale University |
| issn | 1424-8220 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj-art-c7aa23650f8c4fd6a9583fbb6f33725f2025-01-24T13:49:17ZengMDPI AGSensors1424-82202025-01-0125254610.3390/s25020546The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO<sub>2</sub>/SiO<sub>2</sub> Double-LayerMiloš Marjanović0Stefan D. Ilić1Sandra Veljković2Nikola Mitrović3Umutcan Gurer4Ozan Yilmaz5Aysegul Kahraman6Aliekber Aktag7Huseyin Karacali8Erhan Budak9Danijel Danković10Goran Ristić11Ercan Yilmaz12Department of Microelectronics, Faculty of Electronic Engineering, University of Niš, 18000 Niš, SerbiaCenter of Microelectronic Technologies, Institute of Chemistry, Technology and Metallurgy, University of Belgrade, 11000 Belgrade, SerbiaDepartment of Microelectronics, Faculty of Electronic Engineering, University of Niš, 18000 Niš, SerbiaDepartment of Microelectronics, Faculty of Electronic Engineering, University of Niš, 18000 Niš, SerbiaFaculty of Arts and Sciences, Bolu Abant Izzet Baysal University, 14280 Bolu, TurkeyFaculty of Arts and Sciences, Bolu Abant Izzet Baysal University, 14280 Bolu, TurkeyDepartment of Physics, Faculty of Arts and Sciences, Bursa Uludag University, 16059 Bursa, TurkeyFaculty of Arts and Sciences, Bolu Abant Izzet Baysal University, 14280 Bolu, TurkeyFaculty of Arts and Sciences, Bolu Abant Izzet Baysal University, 14280 Bolu, TurkeyFaculty of Arts and Sciences, Bolu Abant Izzet Baysal University, 14280 Bolu, TurkeyDepartment of Microelectronics, Faculty of Electronic Engineering, University of Niš, 18000 Niš, SerbiaDepartment of Microelectronics, Faculty of Electronic Engineering, University of Niš, 18000 Niš, SerbiaFaculty of Arts and Sciences, Bolu Abant Izzet Baysal University, 14280 Bolu, TurkeyWe report on a procedure for extracting the SPICE model parameters of a RADFET sensor with a dielectric HfO<sub>2</sub>/SiO<sub>2</sub> double-layer. RADFETs, traditionally fabricated as PMOS transistors with SiO<sub>2</sub>, are enhanced by incorporating high-k dielectric materials such as HfO<sub>2</sub> to reduce oxide thickness in modern radiation sensors. The fabrication steps of the sensor are outlined, and model parameters, including the threshold voltage and transconductance, are extracted based on experimental data. Experimental setups for measuring electrical characteristics and irradiation are described, and a method for determining model parameters dependent on the accumulated dose is provided. A SPICE model card is proposed, including parameters for two dielectric thicknesses: (30/10) nm and (40/5) nm. The sensitivities of the sensors are 1.685 mV/Gy and 0.78 mV/Gy, respectively. The model is calibrated for doses up to 20 Gy, and good agreement between experimental and simulation results validates the proposed model.https://www.mdpi.com/1424-8220/25/2/546SPICE modelRADFEThigh-k materialsradiation sensorelectrical simulation |
| spellingShingle | Miloš Marjanović Stefan D. Ilić Sandra Veljković Nikola Mitrović Umutcan Gurer Ozan Yilmaz Aysegul Kahraman Aliekber Aktag Huseyin Karacali Erhan Budak Danijel Danković Goran Ristić Ercan Yilmaz The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO<sub>2</sub>/SiO<sub>2</sub> Double-Layer Sensors SPICE model RADFET high-k materials radiation sensor electrical simulation |
| title | The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO<sub>2</sub>/SiO<sub>2</sub> Double-Layer |
| title_full | The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO<sub>2</sub>/SiO<sub>2</sub> Double-Layer |
| title_fullStr | The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO<sub>2</sub>/SiO<sub>2</sub> Double-Layer |
| title_full_unstemmed | The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO<sub>2</sub>/SiO<sub>2</sub> Double-Layer |
| title_short | The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO<sub>2</sub>/SiO<sub>2</sub> Double-Layer |
| title_sort | spice modeling of a radiation sensor based on a mosfet with a dielectric hfo sub 2 sub sio sub 2 sub double layer |
| topic | SPICE model RADFET high-k materials radiation sensor electrical simulation |
| url | https://www.mdpi.com/1424-8220/25/2/546 |
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