The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO<sub>2</sub>/SiO<sub>2</sub> Double-Layer

The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO<sub>2</sub>/SiO<sub>2</sub> Double-Layer

We report on a procedure for extracting the SPICE model parameters of a RADFET sensor with a dielectric HfO<sub>2</sub>/SiO<sub>2</sub> double-layer. RADFETs, traditionally fabricated as PMOS transistors with SiO<sub>2</sub>, are enhanced by incorporating high-k d...

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Bibliographic Details
Main Authors: Miloš Marjanović, Stefan D. Ilić, Sandra Veljković, Nikola Mitrović, Umutcan Gurer, Ozan Yilmaz, Aysegul Kahraman, Aliekber Aktag, Huseyin Karacali, Erhan Budak, Danijel Danković, Goran Ristić, Ercan Yilmaz
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Sensors
Subjects:
SPICE model
RADFET
high-k materials
radiation sensor
electrical simulation
Online Access:https://www.mdpi.com/1424-8220/25/2/546
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