The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO<sub>2</sub>/SiO<sub>2</sub> Double-Layer

The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO<sub>2</sub>/SiO<sub>2</sub> Double-Layer

We report on a procedure for extracting the SPICE model parameters of a RADFET sensor with a dielectric HfO<sub>2</sub>/SiO<sub>2</sub> double-layer. RADFETs, traditionally fabricated as PMOS transistors with SiO<sub>2</sub>, are enhanced by incorporating high-k d...

Full description

Saved in:

Bibliographic Details
Main Authors:	Miloš Marjanović, Stefan D. Ilić, Sandra Veljković, Nikola Mitrović, Umutcan Gurer, Ozan Yilmaz, Aysegul Kahraman, Aliekber Aktag, Huseyin Karacali, Erhan Budak, Danijel Danković, Goran Ristić, Ercan Yilmaz
Format:	Article
Language:	English
Published:	MDPI AG 2025-01-01
Series:	Sensors
Subjects:	SPICE model RADFET high-k materials radiation sensor electrical simulation
Online Access:	https://www.mdpi.com/1424-8220/25/2/546
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	We report on a procedure for extracting the SPICE model parameters of a RADFET sensor with a dielectric HfO<sub>2</sub>/SiO<sub>2</sub> double-layer. RADFETs, traditionally fabricated as PMOS transistors with SiO<sub>2</sub>, are enhanced by incorporating high-k dielectric materials such as HfO<sub>2</sub> to reduce oxide thickness in modern radiation sensors. The fabrication steps of the sensor are outlined, and model parameters, including the threshold voltage and transconductance, are extracted based on experimental data. Experimental setups for measuring electrical characteristics and irradiation are described, and a method for determining model parameters dependent on the accumulated dose is provided. A SPICE model card is proposed, including parameters for two dielectric thicknesses: (30/10) nm and (40/5) nm. The sensitivities of the sensors are 1.685 mV/Gy and 0.78 mV/Gy, respectively. The model is calibrated for doses up to 20 Gy, and good agreement between experimental and simulation results validates the proposed model.
ISSN:	1424-8220