Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime Using Y and Z Functions
The saturation regime of two types of fully depleted (FD) SOI MOSFET devices was studied. Ultrathin body (UTB) and gate recessed channel (GRC) devices were fabricated simultaneously on the same silicon wafer through a selective “gate recessed” process. They share the same W/L ratio but have a channe...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2014/782417 |
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| author | A. Karsenty A. Chelly |
| author_facet | A. Karsenty A. Chelly |
| author_sort | A. Karsenty |
| collection | DOAJ |
| description | The saturation regime of two types of fully depleted (FD) SOI MOSFET devices was studied. Ultrathin body (UTB) and gate recessed channel (GRC) devices were fabricated simultaneously on the same silicon wafer through a selective “gate recessed” process. They share the same W/L ratio but have a channel film thickness of 46 nm and 2.2 nm, respectively. Their standard characteristics (IDS-VDS and IDS-VGS) of the devices were measured at room temperature before cooling down to 77 K. Surprisingly, their respective temperature dependence is found to be opposite. In this paper, we focus our comparative analysis on the devices' conduction using a Y-function applied to the saturation domain. The influence of the temperature in this domain is presented for the first time. We point out the limits of the Y-function analysis and show that a new function called Z can be used to extract the series resistance in the saturation regime. |
| format | Article |
| id | doaj-art-121fab6f21de46ffae77d4459d14006b |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-121fab6f21de46ffae77d4459d14006b2025-02-03T01:02:51ZengWileyActive and Passive Electronic Components0882-75161563-50312014-01-01201410.1155/2014/782417782417Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime Using Y and Z FunctionsA. Karsenty0A. Chelly1Department of Applied Physics, Faculty of Engineering, Jerusalem College of Technology, 91160 Jerusalem, IsraelFaculty of Engineering, Bar-Ilan University, 52900 Ramat Gan, IsraelThe saturation regime of two types of fully depleted (FD) SOI MOSFET devices was studied. Ultrathin body (UTB) and gate recessed channel (GRC) devices were fabricated simultaneously on the same silicon wafer through a selective “gate recessed” process. They share the same W/L ratio but have a channel film thickness of 46 nm and 2.2 nm, respectively. Their standard characteristics (IDS-VDS and IDS-VGS) of the devices were measured at room temperature before cooling down to 77 K. Surprisingly, their respective temperature dependence is found to be opposite. In this paper, we focus our comparative analysis on the devices' conduction using a Y-function applied to the saturation domain. The influence of the temperature in this domain is presented for the first time. We point out the limits of the Y-function analysis and show that a new function called Z can be used to extract the series resistance in the saturation regime.http://dx.doi.org/10.1155/2014/782417 |
| spellingShingle | A. Karsenty A. Chelly Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime Using Y and Z Functions Active and Passive Electronic Components |
| title | Investigation of the Low-Temperature Behavior of
FD-SOI MOSFETs in the Saturation Regime Using Y and Z Functions |
| title_full | Investigation of the Low-Temperature Behavior of
FD-SOI MOSFETs in the Saturation Regime Using Y and Z Functions |
| title_fullStr | Investigation of the Low-Temperature Behavior of
FD-SOI MOSFETs in the Saturation Regime Using Y and Z Functions |
| title_full_unstemmed | Investigation of the Low-Temperature Behavior of
FD-SOI MOSFETs in the Saturation Regime Using Y and Z Functions |
| title_short | Investigation of the Low-Temperature Behavior of
FD-SOI MOSFETs in the Saturation Regime Using Y and Z Functions |
| title_sort | investigation of the low temperature behavior of fd soi mosfets in the saturation regime using y and z functions |
| url | http://dx.doi.org/10.1155/2014/782417 |
| work_keys_str_mv | AT akarsenty investigationofthelowtemperaturebehavioroffdsoimosfetsinthesaturationregimeusingyandzfunctions AT achelly investigationofthelowtemperaturebehavioroffdsoimosfetsinthesaturationregimeusingyandzfunctions |