Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime Using Y and Z Functions
The saturation regime of two types of fully depleted (FD) SOI MOSFET devices was studied. Ultrathin body (UTB) and gate recessed channel (GRC) devices were fabricated simultaneously on the same silicon wafer through a selective “gate recessed” process. They share the same W/L ratio but have a channe...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2014/782417 |
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