Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral
We propose a simple model, derived from Pao-Sah theory, valid in all modes from weak to strong inversion, to calculate the drain current in Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The Pao-Sah double integral is decomposed into single integrals with limits of integration calculate...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Wiley
2010-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2010/268431 |
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| _version_ | 1832549767067992064 |
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| author | Hugues Murray Patrick Martin Serge Bardy |
| author_facet | Hugues Murray Patrick Martin Serge Bardy |
| author_sort | Hugues Murray |
| collection | DOAJ |
| description | We propose a simple model, derived from Pao-Sah theory, valid in all modes from weak
to strong inversion, to calculate the drain current in Metal Oxide Semiconductor Field Effect
Transistor (MOSFET). The Pao-Sah double integral is decomposed into single integrals with limits of
integration calculated from Taylor polynomials of inverse functions. The solution is presented
analytically wherever possible, and the integration is made from simple numerical methods
(Simpson, Romberg) or adaptative algorithms and can be implemented in simple C-program
or in usual mathematical software. The transconductance and the diffusion current are also
calculated with the same model. |
| format | Article |
| id | doaj-art-077a1b47bfde4efeba1992dd4ac75109 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2010-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-077a1b47bfde4efeba1992dd4ac751092025-02-03T06:08:35ZengWileyActive and Passive Electronic Components0882-75161563-50312010-01-01201010.1155/2010/268431268431Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah IntegralHugues Murray0Patrick Martin1Serge Bardy2LaMIPS, Laboratoire commun NXP-CRISMAT, UMR 6508 CNRS ENSICAEN, UCBN, 2, rue de la Girafe BP 5120, F-14079 Caen Cedex 5, FranceLaMIPS, Laboratoire commun NXP-CRISMAT, UMR 6508 CNRS ENSICAEN, UCBN, 2, rue de la Girafe BP 5120, F-14079 Caen Cedex 5, FranceNXP Semiconductors 2, Esplanade Anton Philips Campus Effiscience, Colombelles, BP 20 000 14906 Caen Cedex 9, FranceWe propose a simple model, derived from Pao-Sah theory, valid in all modes from weak to strong inversion, to calculate the drain current in Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The Pao-Sah double integral is decomposed into single integrals with limits of integration calculated from Taylor polynomials of inverse functions. The solution is presented analytically wherever possible, and the integration is made from simple numerical methods (Simpson, Romberg) or adaptative algorithms and can be implemented in simple C-program or in usual mathematical software. The transconductance and the diffusion current are also calculated with the same model.http://dx.doi.org/10.1155/2010/268431 |
| spellingShingle | Hugues Murray Patrick Martin Serge Bardy Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral Active and Passive Electronic Components |
| title | Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral |
| title_full | Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral |
| title_fullStr | Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral |
| title_full_unstemmed | Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral |
| title_short | Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral |
| title_sort | taylor expansion of surface potential in mosfet application to pao sah integral |
| url | http://dx.doi.org/10.1155/2010/268431 |
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