Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral
We propose a simple model, derived from Pao-Sah theory, valid in all modes from weak to strong inversion, to calculate the drain current in Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The Pao-Sah double integral is decomposed into single integrals with limits of integration calculate...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2010-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2010/268431 |
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