Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral
We propose a simple model, derived from Pao-Sah theory, valid in all modes from weak to strong inversion, to calculate the drain current in Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The Pao-Sah double integral is decomposed into single integrals with limits of integration calculate...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2010-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2010/268431 |
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| Summary: | We propose a simple model, derived from Pao-Sah theory, valid in all modes from weak
to strong inversion, to calculate the drain current in Metal Oxide Semiconductor Field Effect
Transistor (MOSFET). The Pao-Sah double integral is decomposed into single integrals with limits of
integration calculated from Taylor polynomials of inverse functions. The solution is presented
analytically wherever possible, and the integration is made from simple numerical methods
(Simpson, Romberg) or adaptative algorithms and can be implemented in simple C-program
or in usual mathematical software. The transconductance and the diffusion current are also
calculated with the same model. |
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| ISSN: | 0882-7516 1563-5031 |