Simulation of Open Circuit Voltage Decay for Solar Cell Determination of the Base Minority Carrier Lifetime and the Back Surface Recombination Velocity
The Open Circuit Voltage Decay (OCVD) method for the determination of the base minority carrier lifetime (τ ) and the back surface recombination velocity (S) of silicon solar cells has been investigated at constant illumination level. The validity of the method has been discussed through a simulatio...
Saved in:
Main Authors: | B. Affour, P. Mialhe |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley
1997-01-01
|
Series: | Active and Passive Electronic Components |
Online Access: | http://dx.doi.org/10.1155/1997/46342 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
New Coefficients of the Minority Carrier Lifetime and Bandgap Narrowing Models in the Transparent Emitter of Thin Film Silicon Solar Cells
by: M. Benosman, et al.
Published: (2001-01-01) -
New Coefficients of the Minority Carrier Lifetime and Bandgap Narrowing Models in the Transparent Emitter of Thin Film Silicon Solar Cells
by: A. Zerga, et al.
Published: (2003-01-01) -
Interfacial Dynamic Velocity for Solar Cell Characterization
by: J. Farah, et al.
Published: (1997-01-01) -
Experimental Determination of Effective Minority Carrier Lifetime in HgCdTe Photovoltaic Detectors Using Optical and Electrical Methods
by: Haoyang Cui, et al.
Published: (2015-01-01) -
High Injection Effects on Solar Cell Performances
by: P. Mialhe, et al.
Published: (1995-01-01)