Electronic Structure and Optical Properties of GaAs1-xBix Alloy
A first-principles study has been performed to investigate the structural and electronic properties of the GaAs1-xBix system. The simulations are based upon the generalized gradient approximation (GGA) within the framework of density functional theory (DFT). Calculations are performed to different B...
Saved in:
Main Authors: | Xindong You, Renjie Zhou |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley
2014-01-01
|
Series: | Advances in Condensed Matter Physics |
Online Access: | http://dx.doi.org/10.1155/2014/496898 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model
by: D. P. Samajdar, et al.
Published: (2014-01-01) -
Electronic Structure and Optical Properties of GaAs Doped with Rare-Earth Elements (Sc, Y, La, Ce, and Pr)
by: Yongrong Deng, et al.
Published: (2025-01-01) -
Optical Investigation of p-GaAs/i-GaN0.38yAs1-1.38ySby/n-GaAs Quantum Wells Emitters
by: I. Guizani, et al.
Published: (2022-01-01) -
Electronic Structure of Hydrogenated and Surface-Modified GaAs Nanocrystals: Ab Initio Calculations
by: Hamsa Naji Nasir, et al.
Published: (2012-01-01) -
Optical Properties of GaAs Nanowires with an Electric Potential That Varies Inversely with the Square of the Radial Distance
by: Moletlanyi Tshipa
Published: (2019-01-01)