Effective Passivation of Large Area Black Silicon Solar Cells by SiO2/SiNx:H Stacks
The performance of black silicon solar cells with various passivation films was characterized. Large area (156×156 mm2) black silicon was prepared by silver-nanoparticle-assisted etching on pyramidal silicon wafer. The conversion efficiency of black silicon solar cell without passivation is 13.8%. F...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
|
| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/683654 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832562851092365312 |
|---|---|
| author | Zengchao Zhao Bingye Zhang Ping Li Wan Guo Aimin Liu |
| author_facet | Zengchao Zhao Bingye Zhang Ping Li Wan Guo Aimin Liu |
| author_sort | Zengchao Zhao |
| collection | DOAJ |
| description | The performance of black silicon solar cells with various passivation films was characterized. Large area (156×156 mm2) black silicon was prepared by silver-nanoparticle-assisted etching on pyramidal silicon wafer. The conversion efficiency of black silicon solar cell without passivation is 13.8%. For the SiO2 and SiNx:H passivation, the conversion efficiency of black silicon solar cells increases to 16.1% and 16.5%, respectively. Compared to the single film of surface passivation of black silicon solar cells, the SiO2/SiNx:H stacks exhibit the highest efficiency of 17.1%. The investigation of internal quantum efficiency (IQE) suggests that the SiO2/SiNx:H stacks films decrease the Auger recombination through reducing the surface doping concentration and surface state density of the Si/SiO2 interface, and SiNx:H layer suppresses the Shockley-Read-Hall (SRH) recombination in the black silicon solar cell, which yields the best electrical performance of b-Si solar cells. |
| format | Article |
| id | doaj-art-fea65b1cd85749a0a3b6e9303b07619a |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-fea65b1cd85749a0a3b6e9303b07619a2025-02-03T01:21:38ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/683654683654Effective Passivation of Large Area Black Silicon Solar Cells by SiO2/SiNx:H StacksZengchao Zhao0Bingye Zhang1Ping Li2Wan Guo3Aimin Liu4School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023, ChinaSchool of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023, ChinaSchool of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023, ChinaSchool of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023, ChinaSchool of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023, ChinaThe performance of black silicon solar cells with various passivation films was characterized. Large area (156×156 mm2) black silicon was prepared by silver-nanoparticle-assisted etching on pyramidal silicon wafer. The conversion efficiency of black silicon solar cell without passivation is 13.8%. For the SiO2 and SiNx:H passivation, the conversion efficiency of black silicon solar cells increases to 16.1% and 16.5%, respectively. Compared to the single film of surface passivation of black silicon solar cells, the SiO2/SiNx:H stacks exhibit the highest efficiency of 17.1%. The investigation of internal quantum efficiency (IQE) suggests that the SiO2/SiNx:H stacks films decrease the Auger recombination through reducing the surface doping concentration and surface state density of the Si/SiO2 interface, and SiNx:H layer suppresses the Shockley-Read-Hall (SRH) recombination in the black silicon solar cell, which yields the best electrical performance of b-Si solar cells.http://dx.doi.org/10.1155/2014/683654 |
| spellingShingle | Zengchao Zhao Bingye Zhang Ping Li Wan Guo Aimin Liu Effective Passivation of Large Area Black Silicon Solar Cells by SiO2/SiNx:H Stacks International Journal of Photoenergy |
| title | Effective Passivation of Large Area Black Silicon Solar Cells by SiO2/SiNx:H Stacks |
| title_full | Effective Passivation of Large Area Black Silicon Solar Cells by SiO2/SiNx:H Stacks |
| title_fullStr | Effective Passivation of Large Area Black Silicon Solar Cells by SiO2/SiNx:H Stacks |
| title_full_unstemmed | Effective Passivation of Large Area Black Silicon Solar Cells by SiO2/SiNx:H Stacks |
| title_short | Effective Passivation of Large Area Black Silicon Solar Cells by SiO2/SiNx:H Stacks |
| title_sort | effective passivation of large area black silicon solar cells by sio2 sinx h stacks |
| url | http://dx.doi.org/10.1155/2014/683654 |
| work_keys_str_mv | AT zengchaozhao effectivepassivationoflargeareablacksiliconsolarcellsbysio2sinxhstacks AT bingyezhang effectivepassivationoflargeareablacksiliconsolarcellsbysio2sinxhstacks AT pingli effectivepassivationoflargeareablacksiliconsolarcellsbysio2sinxhstacks AT wanguo effectivepassivationoflargeareablacksiliconsolarcellsbysio2sinxhstacks AT aiminliu effectivepassivationoflargeareablacksiliconsolarcellsbysio2sinxhstacks |