Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors
As the scaling proceeds, the transverse electric field increase, and a mobility attenuation phenomenon becomes of primordial interest. Indeed, the high transverse electric field is generally ascribed [1] to surface roughness scattering in the channel and consequently reduce effective mobility of car...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2001-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/2001/75780 |
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| _version_ | 1832565549959217152 |
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| author | A. El Abbassi Y. Amhouche E. Bendada R. Rmaily K. Raïs |
| author_facet | A. El Abbassi Y. Amhouche E. Bendada R. Rmaily K. Raïs |
| author_sort | A. El Abbassi |
| collection | DOAJ |
| description | As the scaling proceeds, the transverse electric field increase, and a mobility attenuation
phenomenon becomes of primordial interest. Indeed, the high transverse electric field is
generally ascribed [1] to surface roughness scattering in the channel and consequently
reduce effective mobility of carriers. In short channel MOSFET, the Source-Drain
resistance Rsd influence strongly the effective mobility. |
| format | Article |
| id | doaj-art-fbb60449910d40e0945d1b19b9c6f4a5 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2001-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-fbb60449910d40e0945d1b19b9c6f4a52025-02-03T01:07:27ZengWileyActive and Passive Electronic Components0882-75161563-50312001-01-01241132210.1155/2001/75780Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS TransistorsA. El Abbassi0Y. Amhouche1E. Bendada2R. Rmaily3K. Raïs4Laboratoire de Caractérisation des Composants à Semi-conducteurs, Université Chouaib, Doukkali B.P. 20, EL Jadida, MoroccoLaboratoire de Caractérisation des Composants à Semi-conducteurs, Université Chouaib, Doukkali B.P. 20, EL Jadida, MoroccoLaboratoire de la Microélectronique et de l'instrumentation, Faculté des Sciences et Techniques, B.P. 509 Errachidia, MoroccoLaboratoire de Caractérisation des Composants à Semi-conducteurs, Université Chouaib, Doukkali B.P. 20, EL Jadida, MoroccoLaboratoire de Caractérisation des Composants à Semi-conducteurs, Université Chouaib, Doukkali B.P. 20, EL Jadida, MoroccoAs the scaling proceeds, the transverse electric field increase, and a mobility attenuation phenomenon becomes of primordial interest. Indeed, the high transverse electric field is generally ascribed [1] to surface roughness scattering in the channel and consequently reduce effective mobility of carriers. In short channel MOSFET, the Source-Drain resistance Rsd influence strongly the effective mobility.http://dx.doi.org/10.1155/2001/75780MOS TransistorSurface roughnessEffective mobilitySeries resistance. |
| spellingShingle | A. El Abbassi Y. Amhouche E. Bendada R. Rmaily K. Raïs Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors Active and Passive Electronic Components MOS Transistor Surface roughness Effective mobility Series resistance. |
| title | Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors |
| title_full | Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors |
| title_fullStr | Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors |
| title_full_unstemmed | Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors |
| title_short | Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors |
| title_sort | characterization of series resistances and mobility attenuation phenomena in short channel mos transistors |
| topic | MOS Transistor Surface roughness Effective mobility Series resistance. |
| url | http://dx.doi.org/10.1155/2001/75780 |
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