An X-Band Class-J GaN MMIC Power Amplifier with Well-Designed In-Band Output Power Flatness

An X-Band Class-J GaN MMIC Power Amplifier with Well-Designed In-Band Output Power Flatness

This paper presents an X-band high-power GaN MMIC power amplifier (PA). To balance efficiency, output power, and saturated power flatness, the load-line theory is employed to analyze and validate the power variation trends within an extended continuous Class B/J (CCBJ) impedance space. Theoretical c...

Full description

Saved in:
Bibliographic Details
Main Authors: Bangjie Zheng, Zhiqun Cheng, Zhiwei Zhang, Ruizhe Zhang, Tingwei Gong, Chao Le
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Micromachines
Subjects:
power amplifier (PA)
MMIC
GaN
X-band
Class-J
Online Access:https://www.mdpi.com/2072-666X/16/1/87
Tags: Add Tag
No Tags, Be the first to tag this record!

Similar Items

Similar Items