An X-Band Class-J GaN MMIC Power Amplifier with Well-Designed In-Band Output Power Flatness
This paper presents an X-band high-power GaN MMIC power amplifier (PA). To balance efficiency, output power, and saturated power flatness, the load-line theory is employed to analyze and validate the power variation trends within an extended continuous Class B/J (CCBJ) impedance space. Theoretical c...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-01-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/1/87 |
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