An X-Band Class-J GaN MMIC Power Amplifier with Well-Designed In-Band Output Power Flatness
This paper presents an X-band high-power GaN MMIC power amplifier (PA). To balance efficiency, output power, and saturated power flatness, the load-line theory is employed to analyze and validate the power variation trends within an extended continuous Class B/J (CCBJ) impedance space. Theoretical c...
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| Format: | Article |
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MDPI AG
2025-01-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/16/1/87 |
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| author | Bangjie Zheng Zhiqun Cheng Zhiwei Zhang Ruizhe Zhang Tingwei Gong Chao Le |
| author_facet | Bangjie Zheng Zhiqun Cheng Zhiwei Zhang Ruizhe Zhang Tingwei Gong Chao Le |
| author_sort | Bangjie Zheng |
| collection | DOAJ |
| description | This paper presents an X-band high-power GaN MMIC power amplifier (PA). To balance efficiency, output power, and saturated power flatness, the load-line theory is employed to analyze and validate the power variation trends within an extended continuous Class B/J (CCBJ) impedance space. Theoretical constant power contours are plotted within this space. An L-C impedance matching network is used to match the amplifier’s output impedance to the overlapping region of the 0.5 dB constant power contour and the CCBJ impedance space, significantly improving the in-band power flatness of the PA based on the CCBJ design approach. Additionally, an RC parallel structure is integrated into the interstage matching network to maximize gain while ensuring stability. The proposed PA, implemented using a 0.25 µm commercial GaN process, achieves a saturated output power of 47–47.6 dBm with in-band fluctuations within ± 0.3 dB, a power gain of 27.0–27.8 dB, and an efficiency of 40–45.5% across the X-band. |
| format | Article |
| id | doaj-art-f8422c601966443483e782141577ade1 |
| institution | Kabale University |
| issn | 2072-666X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-f8422c601966443483e782141577ade12025-01-24T13:42:06ZengMDPI AGMicromachines2072-666X2025-01-011618710.3390/mi16010087An X-Band Class-J GaN MMIC Power Amplifier with Well-Designed In-Band Output Power FlatnessBangjie Zheng0Zhiqun Cheng1Zhiwei Zhang2Ruizhe Zhang3Tingwei Gong4Chao Le5School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, ChinaSchool of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, ChinaSchool of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, ChinaSchool of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, ChinaSchool of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, ChinaSchool of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, ChinaThis paper presents an X-band high-power GaN MMIC power amplifier (PA). To balance efficiency, output power, and saturated power flatness, the load-line theory is employed to analyze and validate the power variation trends within an extended continuous Class B/J (CCBJ) impedance space. Theoretical constant power contours are plotted within this space. An L-C impedance matching network is used to match the amplifier’s output impedance to the overlapping region of the 0.5 dB constant power contour and the CCBJ impedance space, significantly improving the in-band power flatness of the PA based on the CCBJ design approach. Additionally, an RC parallel structure is integrated into the interstage matching network to maximize gain while ensuring stability. The proposed PA, implemented using a 0.25 µm commercial GaN process, achieves a saturated output power of 47–47.6 dBm with in-band fluctuations within ± 0.3 dB, a power gain of 27.0–27.8 dB, and an efficiency of 40–45.5% across the X-band.https://www.mdpi.com/2072-666X/16/1/87power amplifier (PA)MMICGaNX-bandClass-J |
| spellingShingle | Bangjie Zheng Zhiqun Cheng Zhiwei Zhang Ruizhe Zhang Tingwei Gong Chao Le An X-Band Class-J GaN MMIC Power Amplifier with Well-Designed In-Band Output Power Flatness Micromachines power amplifier (PA) MMIC GaN X-band Class-J |
| title | An X-Band Class-J GaN MMIC Power Amplifier with Well-Designed In-Band Output Power Flatness |
| title_full | An X-Band Class-J GaN MMIC Power Amplifier with Well-Designed In-Band Output Power Flatness |
| title_fullStr | An X-Band Class-J GaN MMIC Power Amplifier with Well-Designed In-Band Output Power Flatness |
| title_full_unstemmed | An X-Band Class-J GaN MMIC Power Amplifier with Well-Designed In-Band Output Power Flatness |
| title_short | An X-Band Class-J GaN MMIC Power Amplifier with Well-Designed In-Band Output Power Flatness |
| title_sort | x band class j gan mmic power amplifier with well designed in band output power flatness |
| topic | power amplifier (PA) MMIC GaN X-band Class-J |
| url | https://www.mdpi.com/2072-666X/16/1/87 |
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