An X-Band Class-J GaN MMIC Power Amplifier with Well-Designed In-Band Output Power Flatness
This paper presents an X-band high-power GaN MMIC power amplifier (PA). To balance efficiency, output power, and saturated power flatness, the load-line theory is employed to analyze and validate the power variation trends within an extended continuous Class B/J (CCBJ) impedance space. Theoretical c...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-01-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/1/87 |
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| Summary: | This paper presents an X-band high-power GaN MMIC power amplifier (PA). To balance efficiency, output power, and saturated power flatness, the load-line theory is employed to analyze and validate the power variation trends within an extended continuous Class B/J (CCBJ) impedance space. Theoretical constant power contours are plotted within this space. An L-C impedance matching network is used to match the amplifier’s output impedance to the overlapping region of the 0.5 dB constant power contour and the CCBJ impedance space, significantly improving the in-band power flatness of the PA based on the CCBJ design approach. Additionally, an RC parallel structure is integrated into the interstage matching network to maximize gain while ensuring stability. The proposed PA, implemented using a 0.25 µm commercial GaN process, achieves a saturated output power of 47–47.6 dBm with in-band fluctuations within ± 0.3 dB, a power gain of 27.0–27.8 dB, and an efficiency of 40–45.5% across the X-band. |
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| ISSN: | 2072-666X |