Resistive switching mechanisms in BiFeO3 devices with YBCO and Ag as top electrodes
The resistive switching (RS) effect in ferroelectric oxides continues to attract significant attention due to its potential applications in nonvolatile memory and neuromorphic computing devices. In this study, we investigate the RS properties of BiFeO3/YBa2Cu3O7−d (BFO/YBCO) bilayers grown on LSAT s...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-02-01
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| Series: | Physics Open |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666032624000474 |
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