A New Junction Parameters Determination Using the Double Exponential Model
A double exponential model is used to characterize the junction properties of microelectronic devices. A method is developed to extract the physical junction parameters from the current-voltage characteristics. The influence of the start values used for the computing processes are considered and the...
Saved in:
Main Authors: | S. Dib, A. Khoury, F. PéLanchon, P. Mialhe |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley
2002-01-01
|
Series: | Active and Passive Electronic Components |
Online Access: | http://dx.doi.org/10.1080/08827510213496 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
A New Method for the Extraction
of Diode Parameters Using
a Single Exponential Model
by: S. Dib, et al.
Published: (2000-01-01) -
Junction Parameter Extraction for Electronic Device Characterization
by: S. Dib, et al.
Published: (2004-01-01) -
Degradation of VDMOSFET by Heavy Ion Irradiations
by: C. Salame, et al.
Published: (2000-01-01) -
On a Characterization of Exponential and Double Exponential Distributions
by: Reza Rastegar, et al.
Published: (2025-02-01) -
Modelling of Dual-Junction Solar Cells including Tunnel Junction
by: Abdelaziz Amine, et al.
Published: (2013-01-01)