Thermodynamic Properties of Monocrystals of Silicon Doped Boron Impurity

The results of calculations of thermodynamic probability, number of ways of mixture of two components SiB at different levels doped boron are found. Dependences of configuration entropy from a degree doped atoms of an impurity B and configuration entropy from a degree doped atoms of an impurity in...

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Bibliographic Details
Main Author: O.V. Panchenko
Format: Article
Language:English
Published: Sumy State University 2017-02-01
Series:Журнал нано- та електронної фізики
Subjects:
Online Access:http://jnep.sumdu.edu.ua/download/numbers/2017/1/articles/jnep_V9_01019.pdf
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