Thermodynamic Properties of Monocrystals of Silicon Doped Boron Impurity
The results of calculations of thermodynamic probability, number of ways of mixture of two components SiB at different levels doped boron are found. Dependences of configuration entropy from a degree doped atoms of an impurity B and configuration entropy from a degree doped atoms of an impurity in...
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| Format: | Article |
| Language: | English |
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Sumy State University
2017-02-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2017/1/articles/jnep_V9_01019.pdf |
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