Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors
Abstract Optically addressable light valves (OALVs) are specialized optical components utilized for spatial beam shaping in various laser‐based applications, including optics damage mitigation, and enhanced functionality in diode‐based additive manufacturing requiring high intensities. Current state...
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| Format: | Article |
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Wiley-VCH
2025-01-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202400639 |
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| author | Soroush Ghandiparsi Bikram Chatterjee Jimmy‐Xuan Shen Miranda S. Gottlieb Clint D. Frye Joseph D. Schneider Ryan D. Muir Brandon W. Buckley Sara E. Harrison Qinghui Shao Joel B. Varley Lars F. Voss |
| author_facet | Soroush Ghandiparsi Bikram Chatterjee Jimmy‐Xuan Shen Miranda S. Gottlieb Clint D. Frye Joseph D. Schneider Ryan D. Muir Brandon W. Buckley Sara E. Harrison Qinghui Shao Joel B. Varley Lars F. Voss |
| author_sort | Soroush Ghandiparsi |
| collection | DOAJ |
| description | Abstract Optically addressable light valves (OALVs) are specialized optical components utilized for spatial beam shaping in various laser‐based applications, including optics damage mitigation, and enhanced functionality in diode‐based additive manufacturing requiring high intensities. Current state‐of‐the‐art OALVs employ photoconductors such as Bismuth Silicon Oxide (BSO) or Bismuth Germanium Oxide (BGO), which suffer from limited laser‐induced damage thresholds (LiDT) and inadequate thermal conductivities, thus restricting their use in high peak and average power applications. Aluminum nitride (AlN), an emerging ultra‐wide band gap (UWBG) III–V semiconductor, offers promising optoelectronic properties and superior thermal conductivity (>300 Wm−1K−1 at 298° K, compared to BSO's 3.29 Wm−1K−1). In this study, the first AlN‐based OALVs are designed, fabricated, and experimentally demonstrated using commercially available single‐crystal AlN substrates. These AlN‐based OALVs have shown clear superiority over BSO and BGO‐based devices. Design considerations for OALVs incorporating UWBG photoconductors are discussed, and the photoresponsivity from defect‐mediated sub‐bandgap absorption in AlN crystals is verified as sufficient for OALVs operating under high light fluences. The optimum driving voltage for the AlN‐based OALV is determined to be ≈ 45 Vpp at 100 Hz, achieving a transmittance of 91.3%, an extinction ratio (ER) of more than 100, and a 51:1 image contrast. |
| format | Article |
| id | doaj-art-f08988892b3f45d79296c8fa30c0aca8 |
| institution | Kabale University |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-f08988892b3f45d79296c8fa30c0aca82025-01-20T13:56:19ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-01-01122n/an/a10.1002/admi.202400639Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride PhotoconductorsSoroush Ghandiparsi0Bikram Chatterjee1Jimmy‐Xuan Shen2Miranda S. Gottlieb3Clint D. Frye4Joseph D. Schneider5Ryan D. Muir6Brandon W. Buckley7Sara E. Harrison8Qinghui Shao9Joel B. Varley10Lars F. Voss11Lawrence Livermore National Laboratory Livermore CA 94551 USALawrence Livermore National Laboratory Livermore CA 94551 USALawrence Livermore National Laboratory Livermore CA 94551 USALawrence Livermore National Laboratory Livermore CA 94551 USALawrence Livermore National Laboratory Livermore CA 94551 USALawrence Livermore National Laboratory Livermore CA 94551 USALawrence Livermore National Laboratory Livermore CA 94551 USALawrence Livermore National Laboratory Livermore CA 94551 USALawrence Livermore National Laboratory Livermore CA 94551 USALawrence Livermore National Laboratory Livermore CA 94551 USALawrence Livermore National Laboratory Livermore CA 94551 USALawrence Livermore National Laboratory Livermore CA 94551 USAAbstract Optically addressable light valves (OALVs) are specialized optical components utilized for spatial beam shaping in various laser‐based applications, including optics damage mitigation, and enhanced functionality in diode‐based additive manufacturing requiring high intensities. Current state‐of‐the‐art OALVs employ photoconductors such as Bismuth Silicon Oxide (BSO) or Bismuth Germanium Oxide (BGO), which suffer from limited laser‐induced damage thresholds (LiDT) and inadequate thermal conductivities, thus restricting their use in high peak and average power applications. Aluminum nitride (AlN), an emerging ultra‐wide band gap (UWBG) III–V semiconductor, offers promising optoelectronic properties and superior thermal conductivity (>300 Wm−1K−1 at 298° K, compared to BSO's 3.29 Wm−1K−1). In this study, the first AlN‐based OALVs are designed, fabricated, and experimentally demonstrated using commercially available single‐crystal AlN substrates. These AlN‐based OALVs have shown clear superiority over BSO and BGO‐based devices. Design considerations for OALVs incorporating UWBG photoconductors are discussed, and the photoresponsivity from defect‐mediated sub‐bandgap absorption in AlN crystals is verified as sufficient for OALVs operating under high light fluences. The optimum driving voltage for the AlN‐based OALV is determined to be ≈ 45 Vpp at 100 Hz, achieving a transmittance of 91.3%, an extinction ratio (ER) of more than 100, and a 51:1 image contrast.https://doi.org/10.1002/admi.202400639laser damagenitridesoptoelectronic devicephotoconductorpoint defects |
| spellingShingle | Soroush Ghandiparsi Bikram Chatterjee Jimmy‐Xuan Shen Miranda S. Gottlieb Clint D. Frye Joseph D. Schneider Ryan D. Muir Brandon W. Buckley Sara E. Harrison Qinghui Shao Joel B. Varley Lars F. Voss Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors Advanced Materials Interfaces laser damage nitrides optoelectronic device photoconductor point defects |
| title | Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors |
| title_full | Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors |
| title_fullStr | Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors |
| title_full_unstemmed | Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors |
| title_short | Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors |
| title_sort | enhanced laser damage threshold in optically addressable light valves via aluminum nitride photoconductors |
| topic | laser damage nitrides optoelectronic device photoconductor point defects |
| url | https://doi.org/10.1002/admi.202400639 |
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