Freely Selective Analog and Digital Resistive Switching Behavior of In2Se3 Devices for Storage and Neuromorphic Applications
Abstract Digital storage and analog storage shine in different fields mainly due to their strong stability and high information density, respectively, while the freely selective digital and analog resistance switching applications are a matter of great concern. Here, a multi‐functional device integr...
Saved in:
| Main Authors: | , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-06-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400734 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|