Thermal Stability of Schottky Contacts and Rearrangement of Defects in β‐Ga2O3 Crystals

Thermal Stability of Schottky Contacts and Rearrangement of Defects in β‐Ga2O3 Crystals

Abstract The thermal stability of different Schottky contacts (Au, Pt, and Ni) on (100) β‐Ga2O3 single crystals grown by the Czochralski method is investigated. Besides the examination of the Schottky barrier parameters, contact‐dependent defect levels are investigated by deep‐level transient spectr...

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Bibliographic Details
Main Authors: Palvan Seyidov, Joel B. Varley, Ymir Kalmann Frodason, Detlef Klimm, Lasse Vines, Zbigniew Galazka, Ta‐Shun Chou, Andreas Popp, Klaus Irmscher, Andreas Fiedler
Format: Article
Language:English
Published: Wiley-VCH 2025-01-01
Series:Advanced Electronic Materials
Subjects:
defects
DFT
gallium oxide
Schottky contact
thermal stability
Online Access:https://doi.org/10.1002/aelm.202300428
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https://doi.org/10.1002/aelm.202300428

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