Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors
A method for device characterization is experimented to qualify the relaxable damage in hot-carrier stressing of n-MOS transistors. The degradation of physical parameters of the body-drain junction of power HEXFETs is presented for applied stress condition Vg= Vd/2. Large decrease of the resistance...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2000-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/2000/74014 |
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| Summary: | A method for device characterization is experimented to qualify the relaxable damage in
hot-carrier stressing of n-MOS transistors. The degradation of physical parameters of
the body-drain junction of power HEXFETs is presented for applied stress condition
Vg= Vd/2. Large decrease of the resistance series, of the ideality factor, and of the reverse
recombination current are shown to be related to relaxation time, and are significant
at Vg=–Vd. These effects are discussed and explained by the evolution of the
interface states. |
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| ISSN: | 0882-7516 1563-5031 |