High Frequency Response of Volatile Memristors
Abstract In this theoretical study, the high‐frequency response of the electrothermal NbO2‐Mott threshold switch is focused, a real‐world electronic device, which has been proved to be relevant in several applications and is classified as a volatile memristor. Memristors of this kind, have been show...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-12-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400172 |
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