Controlled Engineering of Defects and Interfaces in Thermoelectric Materials With Atomic Layer Deposition

Abstract Enhancing the performance of thermoelectric materials remains critical for practical applications. Increasing the power factor and reducing the thermal conductivity are key strategies for improving the thermoelectric performance. Doping, incorporating secondary phases, and generating disloc...

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Main Authors: Gwang Min Park, Seunghyeok Lee, Tae Joo Park, Seung‐Hyub Baek, Jin‐Sang Kim, Seong Keun Kim
Format: Article
Language:English
Published: Wiley-VCH 2025-02-01
Series:Advanced Materials Interfaces
Subjects:
Online Access:https://doi.org/10.1002/admi.202400581
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author Gwang Min Park
Seunghyeok Lee
Tae Joo Park
Seung‐Hyub Baek
Jin‐Sang Kim
Seong Keun Kim
author_facet Gwang Min Park
Seunghyeok Lee
Tae Joo Park
Seung‐Hyub Baek
Jin‐Sang Kim
Seong Keun Kim
author_sort Gwang Min Park
collection DOAJ
description Abstract Enhancing the performance of thermoelectric materials remains critical for practical applications. Increasing the power factor and reducing the thermal conductivity are key strategies for improving the thermoelectric performance. Doping, incorporating secondary phases, and generating dislocations can be used to introduce defects and grain boundaries to improve the thermoelectric performance. The application of an ultrathin film as a coating on thermoelectric materials via atomic layer deposition (ALD) has recently attracted attention as a novel approach to enhance the performance. The excellent conformality of ALD enables the conformal deposition of ultrathin films on powder to enable the interfacial properties to be meticulously controlled even after sintering. Using ALD to deposit an ultrathin layer on the thermoelectric powder matrix induces various defects through the interactions of the coating material with the thermoelectric matrix, which provide exquisite control over the material properties. This review discusses the phenomena induced by applying ultrathin coatings to thermoelectric materials through ALD, elucidates the underlying mechanisms, and examines the effects on the thermoelectric performance. Based on these insights, innovative pathways for applying ALD to thermoelectric materials are proposed, and robust strategies for enhancing these properties through the precise modulation of diverse defects and interfaces are discussed.
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institution Kabale University
issn 2196-7350
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publishDate 2025-02-01
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series Advanced Materials Interfaces
spelling doaj-art-ea0e353ccf3b48f2bd0578a9c350cfe92025-02-03T13:24:05ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-02-01123n/an/a10.1002/admi.202400581Controlled Engineering of Defects and Interfaces in Thermoelectric Materials With Atomic Layer DepositionGwang Min Park0Seunghyeok Lee1Tae Joo Park2Seung‐Hyub Baek3Jin‐Sang Kim4Seong Keun Kim5KU‐KIST Graduate School of Converging Science and Technology Korea University Seoul 02841 Republic of KoreaElectronic Materials Research Center Korea Institute of Science and Technology Seoul 02792 Republic of KoreaDepartment of Materials Science and Chemical Engineering Hanyang University Ansan 15588 Republic of KoreaElectronic Materials Research Center Korea Institute of Science and Technology Seoul 02792 Republic of KoreaElectronic Materials Research Center Korea Institute of Science and Technology Seoul 02792 Republic of KoreaKU‐KIST Graduate School of Converging Science and Technology Korea University Seoul 02841 Republic of KoreaAbstract Enhancing the performance of thermoelectric materials remains critical for practical applications. Increasing the power factor and reducing the thermal conductivity are key strategies for improving the thermoelectric performance. Doping, incorporating secondary phases, and generating dislocations can be used to introduce defects and grain boundaries to improve the thermoelectric performance. The application of an ultrathin film as a coating on thermoelectric materials via atomic layer deposition (ALD) has recently attracted attention as a novel approach to enhance the performance. The excellent conformality of ALD enables the conformal deposition of ultrathin films on powder to enable the interfacial properties to be meticulously controlled even after sintering. Using ALD to deposit an ultrathin layer on the thermoelectric powder matrix induces various defects through the interactions of the coating material with the thermoelectric matrix, which provide exquisite control over the material properties. This review discusses the phenomena induced by applying ultrathin coatings to thermoelectric materials through ALD, elucidates the underlying mechanisms, and examines the effects on the thermoelectric performance. Based on these insights, innovative pathways for applying ALD to thermoelectric materials are proposed, and robust strategies for enhancing these properties through the precise modulation of diverse defects and interfaces are discussed.https://doi.org/10.1002/admi.202400581atomic layer depositiondefectsinterfacesthermoelectric materials
spellingShingle Gwang Min Park
Seunghyeok Lee
Tae Joo Park
Seung‐Hyub Baek
Jin‐Sang Kim
Seong Keun Kim
Controlled Engineering of Defects and Interfaces in Thermoelectric Materials With Atomic Layer Deposition
Advanced Materials Interfaces
atomic layer deposition
defects
interfaces
thermoelectric materials
title Controlled Engineering of Defects and Interfaces in Thermoelectric Materials With Atomic Layer Deposition
title_full Controlled Engineering of Defects and Interfaces in Thermoelectric Materials With Atomic Layer Deposition
title_fullStr Controlled Engineering of Defects and Interfaces in Thermoelectric Materials With Atomic Layer Deposition
title_full_unstemmed Controlled Engineering of Defects and Interfaces in Thermoelectric Materials With Atomic Layer Deposition
title_short Controlled Engineering of Defects and Interfaces in Thermoelectric Materials With Atomic Layer Deposition
title_sort controlled engineering of defects and interfaces in thermoelectric materials with atomic layer deposition
topic atomic layer deposition
defects
interfaces
thermoelectric materials
url https://doi.org/10.1002/admi.202400581
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