Modulation of surface phonon polaritons in MoO3 via dynamic doping of SiC substrate

Polar biaxial crystals with extreme anisotropy hold promise for the spatial control and the manipulation of polaritons, as they can undergo topological transitions. However, taking advantage of these unique properties for nanophotonic devices requires to find mechanisms to modulate dynamically the m...

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Main Authors: Garcia-Pomar Juan Luis, Fandan Rajveer, Calle Fernando, Pedrós Jorge
Format: Article
Language:English
Published: De Gruyter 2024-12-01
Series:Nanophotonics
Subjects:
Online Access:https://doi.org/10.1515/nanoph-2024-0386
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author Garcia-Pomar Juan Luis
Fandan Rajveer
Calle Fernando
Pedrós Jorge
author_facet Garcia-Pomar Juan Luis
Fandan Rajveer
Calle Fernando
Pedrós Jorge
author_sort Garcia-Pomar Juan Luis
collection DOAJ
description Polar biaxial crystals with extreme anisotropy hold promise for the spatial control and the manipulation of polaritons, as they can undergo topological transitions. However, taking advantage of these unique properties for nanophotonic devices requires to find mechanisms to modulate dynamically the material response. Here, we present a study on the propagation of surface phonon polaritons (SPhPs) in a photonic architecture based on a thin layer of α-MoO3 deposited on a semiconducting 4H-SiC substrate, whose carrier density can be tuned through photoinduction. By employing this system, we establish a comprehensive polaritonic platform where the propagation of the hybridized SPhPs can be manipulated dynamically due to their coupling with the electron plasma. Specifically, we demonstrate that increasing the doping of the 4H-SiC substrate allows for modulating the on/off switch behavior of SPhP propagation or its controlled canalization. Furthermore, this modulation leads to a notable increase in the Purcell factor, primarily attributed to the doping-induced flat dispersion curve creating ultra-slow light. These findings have significant implications for the development of nanophotonic and quantum technologies, as they enable the utilization of polaritonic materials exclusively.
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institution Kabale University
issn 2192-8614
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publishDate 2024-12-01
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series Nanophotonics
spelling doaj-art-e53741f8f1d9470a86a7dccacaf8146f2025-02-02T15:46:12ZengDe GruyterNanophotonics2192-86142024-12-01141233210.1515/nanoph-2024-0386Modulation of surface phonon polaritons in MoO3 via dynamic doping of SiC substrateGarcia-Pomar Juan Luis0Fandan Rajveer1Calle Fernando2Pedrós Jorge3Departamento de Ingeniería Electrónica, E.T.S.I. de Telecomunicación, Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), Universidad Politécnica de Madrid, Madrid, 28040SpainDepartamento de Ingeniería Electrónica, E.T.S.I. de Telecomunicación, Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), Universidad Politécnica de Madrid, Madrid, 28040SpainDepartamento de Ingeniería Electrónica, E.T.S.I. de Telecomunicación, Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), Universidad Politécnica de Madrid, Madrid, 28040SpainDepartamento de Ingeniería Electrónica, E.T.S.I. de Telecomunicación, Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), Universidad Politécnica de Madrid, Madrid, 28040SpainPolar biaxial crystals with extreme anisotropy hold promise for the spatial control and the manipulation of polaritons, as they can undergo topological transitions. However, taking advantage of these unique properties for nanophotonic devices requires to find mechanisms to modulate dynamically the material response. Here, we present a study on the propagation of surface phonon polaritons (SPhPs) in a photonic architecture based on a thin layer of α-MoO3 deposited on a semiconducting 4H-SiC substrate, whose carrier density can be tuned through photoinduction. By employing this system, we establish a comprehensive polaritonic platform where the propagation of the hybridized SPhPs can be manipulated dynamically due to their coupling with the electron plasma. Specifically, we demonstrate that increasing the doping of the 4H-SiC substrate allows for modulating the on/off switch behavior of SPhP propagation or its controlled canalization. Furthermore, this modulation leads to a notable increase in the Purcell factor, primarily attributed to the doping-induced flat dispersion curve creating ultra-slow light. These findings have significant implications for the development of nanophotonic and quantum technologies, as they enable the utilization of polaritonic materials exclusively.https://doi.org/10.1515/nanoph-2024-0386surface phonon polaritonsmoo3 sicdopingcanalizationpurcell factor
spellingShingle Garcia-Pomar Juan Luis
Fandan Rajveer
Calle Fernando
Pedrós Jorge
Modulation of surface phonon polaritons in MoO3 via dynamic doping of SiC substrate
Nanophotonics
surface phonon polaritons
moo3
sic
doping
canalization
purcell factor
title Modulation of surface phonon polaritons in MoO3 via dynamic doping of SiC substrate
title_full Modulation of surface phonon polaritons in MoO3 via dynamic doping of SiC substrate
title_fullStr Modulation of surface phonon polaritons in MoO3 via dynamic doping of SiC substrate
title_full_unstemmed Modulation of surface phonon polaritons in MoO3 via dynamic doping of SiC substrate
title_short Modulation of surface phonon polaritons in MoO3 via dynamic doping of SiC substrate
title_sort modulation of surface phonon polaritons in moo3 via dynamic doping of sic substrate
topic surface phonon polaritons
moo3
sic
doping
canalization
purcell factor
url https://doi.org/10.1515/nanoph-2024-0386
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AT fandanrajveer modulationofsurfacephononpolaritonsinmoo3viadynamicdopingofsicsubstrate
AT callefernando modulationofsurfacephononpolaritonsinmoo3viadynamicdopingofsicsubstrate
AT pedrosjorge modulationofsurfacephononpolaritonsinmoo3viadynamicdopingofsicsubstrate