Controlled lattice deformation for high-mobility two-dimensional MoTe2 growth

Two-dimensional (2D) MoTe2 shows great potential for future semiconductor devices, but the lab-to-fab transition is still in its preliminary stage due to the constraints in the crystal growth level. Currently, the chemical vapor deposition growth of 2D MoTe2 primarily relies on the tellurization pro...

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Bibliographic Details
Main Authors: Ruishan Li, Mengyu Hong, Wei Shangguan, Yanzhe Zhang, Yihe Liu, He Jiang, Huihui Yu, Li Gao, Xiankun Zhang, Zheng Zhang, Yue Zhang
Format: Article
Language:English
Published: Elsevier 2025-03-01
Series:Journal of Materiomics
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Online Access:http://www.sciencedirect.com/science/article/pii/S2352847824000832
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