Integration of 150 nm gate length N-polar GaN MIS-HEMT devices with all-around diamond for device-level cooling

Integration of 150 nm gate length N-polar GaN MIS-HEMT devices with all-around diamond for device-level cooling

We report the successful integration of low-temperature polycrystalline all-around diamond as heat spreaders with 150 nm gate length N-polar GaN MISHEMT platform to improve power efficiencies for X-band applications. With an all-around integration scheme, the CVD-grown diamond reduces channel’s peak...

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Bibliographic Details
Main Authors: Rohith Soman, Mohamadali Malakoutian, Jeong-kyu Kim, Emre Akso, Nirupam Hatui, Christian Wurm, Umesh Mishra, Srabanti Chowdhury
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
Subjects:
diamond integration
device-level cooling
nitrogen polar
ultrawide bandgap material
Online Access:https://doi.org/10.35848/1882-0786/adcb87
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https://doi.org/10.35848/1882-0786/adcb87

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