Low Resistivity and High Carrier Concentration in SnO<sub>2</sub> Thin Films: The Impact of Nitrogen–Hydrogen Annealing Treatments

Low Resistivity and High Carrier Concentration in SnO<sub>2</sub> Thin Films: The Impact of Nitrogen–Hydrogen Annealing Treatments

The tin dioxide (SnO<sub>2</sub>) thin films in this work were prepared by using plasma-enhanced atomic layer deposition (PEALD), and a systematic analysis was conducted to evaluate the influence of post-deposition annealing at various temperatures in a nitrogen–hydrogen mixed atmosphere...

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Bibliographic Details
Main Authors: Qi-Zhen Chen, Zhi-Xuan Zhang, Wan-Qiang Fu, Jing-Ru Duan, Yu-Xin Yang, Chao-Nan Chen, Shui-Yang Lien
Format: Article
Language:English
Published: MDPI AG 2025-06-01
Series:Nanomaterials
Subjects:
PEALD
SnO<sub>2</sub>
annealing
ETL
PSCs
Online Access:https://www.mdpi.com/2079-4991/15/13/986
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