Effect of post-metallization anneal on monolithic co-integration of Hf0.5Zr0.5O2-based FeFET and CMOS

Effect of post-metallization anneal on monolithic co-integration of Hf0.5Zr0.5O2-based FeFET and CMOS

Abstract Hafnium oxide-based ferroelectrics, particularly zirconium-doped HfO2 (HZO), have demonstrated excellent compatibility with CMOS fabrication processes. However, the impact of post-metallization annealing (PMA)—a key step in optimizing device performance—on CMOS and FeFET co-integrated devic...

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Bibliographic Details
Main Authors: Jehyun An, Beomjoo Ham, Giryun Hong, Jongseo Park, Bohyeon Kang, Jaeseong Pyo, Sung-Min Ahn, Rock-Hyun Baek
Format: Article
Language:English
Published: Nature Portfolio 2025-05-01
Series:Scientific Reports
Subjects:
FeFET
Monolithic integration
Post-metallization anneal (PMA)
Hafnium zirconium oxide (HZO)
Ferroelectric memory
Online Access:https://doi.org/10.1038/s41598-025-02281-8
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https://doi.org/10.1038/s41598-025-02281-8

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