Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe2 Field‐Effect Transistors

Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe2 Field‐Effect Transistors

Abstract The pursuit of near‐ideal subthreshold swing (SS) ≈ 60 mV dec−1 is a primary driving force to realize the power‐efficient field‐effect transistors (FETs). This challenge is particularly pronounced in 2D material‐based FETs, where the presence of a large interface trap density (Dit) imposes...

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Bibliographic Details
Main Authors: Fida Ali, Hyungyu Choi, Nasir Ali, Yasir Hassan, Tien Dat Ngo, Faisal Ahmed, Won‐Kyu Park, Zhipei Sun, Won Jong Yoo
Format: Article
Language:English
Published: Wiley-VCH 2024-09-01
Series:Advanced Electronic Materials
Subjects:
p‐type FETs
subthreshold swing
trap density
van der Waals contact
WSe2 thicknesses
Online Access:https://doi.org/10.1002/aelm.202400071
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https://doi.org/10.1002/aelm.202400071

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