Research on the Evolution of Defects Initiation and the Diffusion of Dopant on the Si/SiO2 Interface

Research on the Evolution of Defects Initiation and the Diffusion of Dopant on the Si/SiO2 Interface

Abstract Si/SiO2 interfaces, important parts of Si‐based devices, significantly influence the performance of Si‐based devices. However, owing to the impact of the external environment, related defects are generated, and the dopant can diffuse and redistribute, causing a series of parasitic effects t...

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Bibliographic Details
Main Authors: Yunqi Yang, Dongdong Chen, Di Li, Tianlong Zhao, Weida Zhang, Wen Qiao, Yingjie Liang, Yintang Yang
Format: Article
Language:English
Published: Wiley-VCH 2025-04-01
Series:Advanced Materials Interfaces
Subjects:
defects initiation
defect modeling
dopant diffusion
Si/SiO2 interface
Online Access:https://doi.org/10.1002/admi.202400751
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https://doi.org/10.1002/admi.202400751

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