Conductive filament formation in the failure of Hf0.5Zr0.5O2 ferroelectric capacitors

Conductive filament formation in the failure of Hf0.5Zr0.5O2 ferroelectric capacitors

Ferroelectric materials provide pathways to higher performance logic and memory technologies, with Hf0.5Zr0.5O2 being the most popular among them. However, critical challenges exist in understanding the material’s failure mechanisms to design long endurance lifetimes. In this work, dielectric failur...

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Bibliographic Details
Main Authors:	Matthew Webb, Tony Chiang, Megan K. Lenox, Jordan Gray, Tao Ma, Jon F. Ihlefeld, John T. Heron
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2025-01-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/5.0248765
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