Conductive filament formation in the failure of Hf0.5Zr0.5O2 ferroelectric capacitors
Ferroelectric materials provide pathways to higher performance logic and memory technologies, with Hf0.5Zr0.5O2 being the most popular among them. However, critical challenges exist in understanding the material’s failure mechanisms to design long endurance lifetimes. In this work, dielectric failur...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2025-01-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0248765 |
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