Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation
We propose a high-temperature-operation (HTOT) SOI MOSFET and show preliminary simulation results of its characteristics. It is demonstrated that HTOT SOI MOSFET operates safely at 700 K with no thermal instability because of its expanded effective bandgap. It is shown that its threshold voltage is...
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Format: | Article |
Language: | English |
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Wiley
2011-01-01
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Series: | Active and Passive Electronic Components |
Online Access: | http://dx.doi.org/10.1155/2011/850481 |
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author | Yasuhisa Omura |
author_facet | Yasuhisa Omura |
author_sort | Yasuhisa Omura |
collection | DOAJ |
description | We propose a high-temperature-operation (HTOT) SOI MOSFET and show preliminary simulation results of its characteristics. It is demonstrated that HTOT SOI MOSFET operates safely at 700 K with no thermal instability because of its expanded effective bandgap. It is shown that its threshold voltage is higher than that of the conventional SOI MOSFET because its local thin Si regions offer an expanded effective band gap. It is shown that HTOT SOI MOSFET with 1-nm-thick local-thin Si regions is almost insensitive to temperature for 𝑇<700K
(427 C). This confirms that HTOT SOI MOSFET is a promising device for future high-temperature applications. |
format | Article |
id | doaj-art-de4115b4febf4fd4b69d3f342f31f9c8 |
institution | Kabale University |
issn | 0882-7516 1563-5031 |
language | English |
publishDate | 2011-01-01 |
publisher | Wiley |
record_format | Article |
series | Active and Passive Electronic Components |
spelling | doaj-art-de4115b4febf4fd4b69d3f342f31f9c82025-02-03T05:45:40ZengWileyActive and Passive Electronic Components0882-75161563-50312011-01-01201110.1155/2011/850481850481Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance EvaluationYasuhisa Omura0ORDIST, Graduate School of Engineering Science, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, JapanWe propose a high-temperature-operation (HTOT) SOI MOSFET and show preliminary simulation results of its characteristics. It is demonstrated that HTOT SOI MOSFET operates safely at 700 K with no thermal instability because of its expanded effective bandgap. It is shown that its threshold voltage is higher than that of the conventional SOI MOSFET because its local thin Si regions offer an expanded effective band gap. It is shown that HTOT SOI MOSFET with 1-nm-thick local-thin Si regions is almost insensitive to temperature for 𝑇<700K (427 C). This confirms that HTOT SOI MOSFET is a promising device for future high-temperature applications.http://dx.doi.org/10.1155/2011/850481 |
spellingShingle | Yasuhisa Omura Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation Active and Passive Electronic Components |
title | Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation |
title_full | Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation |
title_fullStr | Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation |
title_full_unstemmed | Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation |
title_short | Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation |
title_sort | proposal of high temperature operation tolerant soi mosfet and preliminary study on device performance evaluation |
url | http://dx.doi.org/10.1155/2011/850481 |
work_keys_str_mv | AT yasuhisaomura proposalofhightemperatureoperationtolerantsoimosfetandpreliminarystudyondeviceperformanceevaluation |