Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation

We propose a high-temperature-operation (HTOT) SOI MOSFET and show preliminary simulation results of its characteristics. It is demonstrated that HTOT SOI MOSFET operates safely at 700 K with no thermal instability because of its expanded effective bandgap. It is shown that its threshold voltage is...

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Main Author: Yasuhisa Omura
Format: Article
Language:English
Published: Wiley 2011-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/2011/850481
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author Yasuhisa Omura
author_facet Yasuhisa Omura
author_sort Yasuhisa Omura
collection DOAJ
description We propose a high-temperature-operation (HTOT) SOI MOSFET and show preliminary simulation results of its characteristics. It is demonstrated that HTOT SOI MOSFET operates safely at 700 K with no thermal instability because of its expanded effective bandgap. It is shown that its threshold voltage is higher than that of the conventional SOI MOSFET because its local thin Si regions offer an expanded effective band gap. It is shown that HTOT SOI MOSFET with 1-nm-thick local-thin Si regions is almost insensitive to temperature for 𝑇<700K (427 C). This confirms that HTOT SOI MOSFET is a promising device for future high-temperature applications.
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institution Kabale University
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language English
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series Active and Passive Electronic Components
spelling doaj-art-de4115b4febf4fd4b69d3f342f31f9c82025-02-03T05:45:40ZengWileyActive and Passive Electronic Components0882-75161563-50312011-01-01201110.1155/2011/850481850481Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance EvaluationYasuhisa Omura0ORDIST, Graduate School of Engineering Science, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, JapanWe propose a high-temperature-operation (HTOT) SOI MOSFET and show preliminary simulation results of its characteristics. It is demonstrated that HTOT SOI MOSFET operates safely at 700 K with no thermal instability because of its expanded effective bandgap. It is shown that its threshold voltage is higher than that of the conventional SOI MOSFET because its local thin Si regions offer an expanded effective band gap. It is shown that HTOT SOI MOSFET with 1-nm-thick local-thin Si regions is almost insensitive to temperature for 𝑇<700K (427 C). This confirms that HTOT SOI MOSFET is a promising device for future high-temperature applications.http://dx.doi.org/10.1155/2011/850481
spellingShingle Yasuhisa Omura
Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation
Active and Passive Electronic Components
title Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation
title_full Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation
title_fullStr Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation
title_full_unstemmed Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation
title_short Proposal of High-Temperature-Operation Tolerant SOI MOSFET and Preliminary Study on Device Performance Evaluation
title_sort proposal of high temperature operation tolerant soi mosfet and preliminary study on device performance evaluation
url http://dx.doi.org/10.1155/2011/850481
work_keys_str_mv AT yasuhisaomura proposalofhightemperatureoperationtolerantsoimosfetandpreliminarystudyondeviceperformanceevaluation