Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs
We have developed a new, zone-based compact physics-based AlGaN/GaN heterojunction field-effect transistor (HFET) model suitable for use in commercial harmonic-balance microwave circuit simulators. The new model is programmed in Verilog-A, an industry-standard compact modeling language. The new mode...
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2012/806253 |
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| _version_ | 1832562504222375936 |
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| author | Danqiong Hou Griff L. Bilbro Robert J. Trew |
| author_facet | Danqiong Hou Griff L. Bilbro Robert J. Trew |
| author_sort | Danqiong Hou |
| collection | DOAJ |
| description | We have developed a new, zone-based compact physics-based AlGaN/GaN heterojunction field-effect transistor (HFET) model suitable for use in commercial harmonic-balance microwave circuit simulators. The new model is programmed in Verilog-A, an industry-standard compact modeling language. The new model permits the dc, small-signal, and large-signal RF performance for the transistor to be determined as a function of the device geometric structure and design features, material composition parameters, and dc and RF operating conditions. The new physics-based HFET model does not require extensive parameter extraction to determine model element values, as commonly employed for traditional equivalent-circuit-based transistor models. The new model has been calibrated and verified. We report very good agreement between simulated and measured dc and RF performance of an experimental C-band microwave power amplifier. |
| format | Article |
| id | doaj-art-ddc19bab1efb4936a4aa689df143d24b |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-ddc19bab1efb4936a4aa689df143d24b2025-02-03T01:22:32ZengWileyActive and Passive Electronic Components0882-75161563-50312012-01-01201210.1155/2012/806253806253Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTsDanqiong Hou0Griff L. Bilbro1Robert J. Trew2Department of ECE, North Carolina State University, Raleigh, NC 27695-7911, USADepartment of ECE, North Carolina State University, Raleigh, NC 27695-7911, USADepartment of ECE, North Carolina State University, Raleigh, NC 27695-7911, USAWe have developed a new, zone-based compact physics-based AlGaN/GaN heterojunction field-effect transistor (HFET) model suitable for use in commercial harmonic-balance microwave circuit simulators. The new model is programmed in Verilog-A, an industry-standard compact modeling language. The new model permits the dc, small-signal, and large-signal RF performance for the transistor to be determined as a function of the device geometric structure and design features, material composition parameters, and dc and RF operating conditions. The new physics-based HFET model does not require extensive parameter extraction to determine model element values, as commonly employed for traditional equivalent-circuit-based transistor models. The new model has been calibrated and verified. We report very good agreement between simulated and measured dc and RF performance of an experimental C-band microwave power amplifier.http://dx.doi.org/10.1155/2012/806253 |
| spellingShingle | Danqiong Hou Griff L. Bilbro Robert J. Trew Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs Active and Passive Electronic Components |
| title | Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs |
| title_full | Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs |
| title_fullStr | Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs |
| title_full_unstemmed | Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs |
| title_short | Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs |
| title_sort | analytic model for conduction current in algan gan hfets hemts |
| url | http://dx.doi.org/10.1155/2012/806253 |
| work_keys_str_mv | AT danqionghou analyticmodelforconductioncurrentinalganganhfetshemts AT grifflbilbro analyticmodelforconductioncurrentinalganganhfetshemts AT robertjtrew analyticmodelforconductioncurrentinalganganhfetshemts |