Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights Into Device Physics for Non-Volatile Memory Applications

Ferroelectric polarization charge in doped-HfO2 such as HfZrOx (HZO) has a high surface density (~1014 cm-2) compared to the channel carrier (~1013 cm-2), thereby, ferroelectric polarization induces high electric field near the channel surface, critically impacting on the chann...

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Bibliographic Details
Main Authors: Song-Hyeon Kuk, Kyul Ko, Bong Ho Kim, Joon Pyo Kim, Jae-Hoon Han, Sang-Hyeon Kim
Format: Article
Language:English
Published: IEEE 2025-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10769066/
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