Investigation of Photo-Electrial Properties in (Fe2O3-G)/n-Si Device
This study focuses on the synthesis of iron oxide-graphene (-Fe2O3-G) composite materials and the evaluation of their performance in devices constructed on n-type silicon (n-Si) semiconductors, under both dark and illuminated conditions. Key electrical parameters such as the ideality factor (n = 2....
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Atatürk University
2024-12-01
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| Series: | Journal of Anatolian Physics and Astronomy |
| Subjects: | |
| Online Access: | https://dergipark.org.tr/tr/download/article-file/4124821 |
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