Multi-channel AlN/GaN Schottky barrier diodes
This paper reports Schottky barrier diodes (SBDs) based on a multi-channel AlN/GaN heterostructure grown by metal-organic chemical vapor deposition. The proposed heterostructure with five channels achieved an extremely low R _sh (69 Ω/□), thanks to a high ${N}_{{s}}$ of 6.7 × 10 ^13 cm ^−2 . The SBD...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/ada2d8 |
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