Comprehensive analysis of In0.53Ga0.47As SOI-FinFET for enhanced RF/wireless performance
This paper comprehensively analyses the RF (Radio Frequency) and wireless performance characteristics of high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs-SOI-FinFET). Firstly, the fundamental operating principles and unique features of InGaAs-SOI-FinFET are discussed, highlighting their thr...
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| Format: | Article |
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Frontiers Media S.A.
2025-02-01
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| Series: | Frontiers in Electronics |
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| Online Access: | https://www.frontiersin.org/articles/10.3389/felec.2025.1497940/full |
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| author | Priyanka Agrwal Ajay Kumar |
| author_facet | Priyanka Agrwal Ajay Kumar |
| author_sort | Priyanka Agrwal |
| collection | DOAJ |
| description | This paper comprehensively analyses the RF (Radio Frequency) and wireless performance characteristics of high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs-SOI-FinFET). Firstly, the fundamental operating principles and unique features of InGaAs-SOI-FinFET are discussed, highlighting their three-dimensional fin structure and improved electrostatic control, which contributes to enhanced electrostatic integrity and reduced leakage currents compared to traditional CMOS technologies. The linearity performance of InGaAs-SOI-FinFET focuses on parameters such as third-order intercept point (IP3) and linearity metrics in analog circuits. The influence of device geometry, biasing schemes, and operating conditions on linearity characteristics and strategies for enhancing linearity while maintaining high-frequency performance is examined. Subsequently, an in-depth analysis of the RF performance metrics, such as fT, fMAX, TFP, GFP and GTFP. Thus, emerging trends and challenges in leveraging InGaAs-SOI-FinFET for RF and linearity-critical applications include circuit design, process integration, and reliability considerations. |
| format | Article |
| id | doaj-art-dd020b0f005945cda7c2862fa33ba5d1 |
| institution | Kabale University |
| issn | 2673-5857 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Frontiers Media S.A. |
| record_format | Article |
| series | Frontiers in Electronics |
| spelling | doaj-art-dd020b0f005945cda7c2862fa33ba5d12025-02-03T06:33:27ZengFrontiers Media S.A.Frontiers in Electronics2673-58572025-02-01610.3389/felec.2025.14979401497940Comprehensive analysis of In0.53Ga0.47As SOI-FinFET for enhanced RF/wireless performancePriyanka AgrwalAjay KumarThis paper comprehensively analyses the RF (Radio Frequency) and wireless performance characteristics of high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs-SOI-FinFET). Firstly, the fundamental operating principles and unique features of InGaAs-SOI-FinFET are discussed, highlighting their three-dimensional fin structure and improved electrostatic control, which contributes to enhanced electrostatic integrity and reduced leakage currents compared to traditional CMOS technologies. The linearity performance of InGaAs-SOI-FinFET focuses on parameters such as third-order intercept point (IP3) and linearity metrics in analog circuits. The influence of device geometry, biasing schemes, and operating conditions on linearity characteristics and strategies for enhancing linearity while maintaining high-frequency performance is examined. Subsequently, an in-depth analysis of the RF performance metrics, such as fT, fMAX, TFP, GFP and GTFP. Thus, emerging trends and challenges in leveraging InGaAs-SOI-FinFET for RF and linearity-critical applications include circuit design, process integration, and reliability considerations.https://www.frontiersin.org/articles/10.3389/felec.2025.1497940/fullC-FinFETInGaAs-SOI-FinFETlinearitySOI-FinFETRF |
| spellingShingle | Priyanka Agrwal Ajay Kumar Comprehensive analysis of In0.53Ga0.47As SOI-FinFET for enhanced RF/wireless performance Frontiers in Electronics C-FinFET InGaAs-SOI-FinFET linearity SOI-FinFET RF |
| title | Comprehensive analysis of In0.53Ga0.47As SOI-FinFET for enhanced RF/wireless performance |
| title_full | Comprehensive analysis of In0.53Ga0.47As SOI-FinFET for enhanced RF/wireless performance |
| title_fullStr | Comprehensive analysis of In0.53Ga0.47As SOI-FinFET for enhanced RF/wireless performance |
| title_full_unstemmed | Comprehensive analysis of In0.53Ga0.47As SOI-FinFET for enhanced RF/wireless performance |
| title_short | Comprehensive analysis of In0.53Ga0.47As SOI-FinFET for enhanced RF/wireless performance |
| title_sort | comprehensive analysis of in0 53ga0 47as soi finfet for enhanced rf wireless performance |
| topic | C-FinFET InGaAs-SOI-FinFET linearity SOI-FinFET RF |
| url | https://www.frontiersin.org/articles/10.3389/felec.2025.1497940/full |
| work_keys_str_mv | AT priyankaagrwal comprehensiveanalysisofin053ga047assoifinfetforenhancedrfwirelessperformance AT ajaykumar comprehensiveanalysisofin053ga047assoifinfetforenhancedrfwirelessperformance |