Joint intelligent optimization design of the active region and electron blocking layer for AlGaN-based deep ultraviolet LEDs
Aiming to enhance the internal quantum efficiency (IQE) of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs), the active region based on the V-shaped quantum well (QW) and the electron-blocking layer (EBL) structure are jointly optimized using intelligent algorithms in this work. This me...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0240168 |
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| author | Jinglei Wang Huimin Lu Jianhua Ma Yifan Zhu Zihua Zhang Tongjun Yu Xuecheng Wei Hua Yang Jianping Wang |
| author_facet | Jinglei Wang Huimin Lu Jianhua Ma Yifan Zhu Zihua Zhang Tongjun Yu Xuecheng Wei Hua Yang Jianping Wang |
| author_sort | Jinglei Wang |
| collection | DOAJ |
| description | Aiming to enhance the internal quantum efficiency (IQE) of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs), the active region based on the V-shaped quantum well (QW) and the electron-blocking layer (EBL) structure are jointly optimized using intelligent algorithms in this work. This method focuses on maximizing the IQE of the DUV LEDs by optimizing the geometric and material parameters of multiple QWs (MQWs) and EBL. It is demonstrated that the DUV LED with an optimized structure exhibits smaller band edge tilt for improved wave function overlap in QWs and more effective carrier blocking for reduced electron overflow compared to that with a conventional structure. The results show that, by optimizing the active region and EBL structure using the proposed method, the IQE and maximum radiation intensity of the AlGaN-based DUV LED are enhanced by 38% and 41% at 200 A/cm2 injection current density, respectively. |
| format | Article |
| id | doaj-art-dc518b4f96bc44b1be4add57ce8e6051 |
| institution | Kabale University |
| issn | 2158-3226 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj-art-dc518b4f96bc44b1be4add57ce8e60512025-02-03T16:40:43ZengAIP Publishing LLCAIP Advances2158-32262025-01-01151015319015319-910.1063/5.0240168Joint intelligent optimization design of the active region and electron blocking layer for AlGaN-based deep ultraviolet LEDsJinglei Wang0Huimin Lu1Jianhua Ma2Yifan Zhu3Zihua Zhang4Tongjun Yu5Xuecheng Wei6Hua Yang7Jianping Wang8The School of Computer and Communication Engineering, University of Science and Technology Beijing, Beijing 100089, ChinaThe School of Computer and Communication Engineering, University of Science and Technology Beijing, Beijing 100089, ChinaThe School of Computer and Communication Engineering, University of Science and Technology Beijing, Beijing 100089, ChinaThe School of Computer and Communication Engineering, University of Science and Technology Beijing, Beijing 100089, ChinaThe School of Computer and Communication Engineering, University of Science and Technology Beijing, Beijing 100089, ChinaThe State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100089, ChinaResearch and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaResearch and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaThe School of Computer and Communication Engineering, University of Science and Technology Beijing, Beijing 100089, ChinaAiming to enhance the internal quantum efficiency (IQE) of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs), the active region based on the V-shaped quantum well (QW) and the electron-blocking layer (EBL) structure are jointly optimized using intelligent algorithms in this work. This method focuses on maximizing the IQE of the DUV LEDs by optimizing the geometric and material parameters of multiple QWs (MQWs) and EBL. It is demonstrated that the DUV LED with an optimized structure exhibits smaller band edge tilt for improved wave function overlap in QWs and more effective carrier blocking for reduced electron overflow compared to that with a conventional structure. The results show that, by optimizing the active region and EBL structure using the proposed method, the IQE and maximum radiation intensity of the AlGaN-based DUV LED are enhanced by 38% and 41% at 200 A/cm2 injection current density, respectively.http://dx.doi.org/10.1063/5.0240168 |
| spellingShingle | Jinglei Wang Huimin Lu Jianhua Ma Yifan Zhu Zihua Zhang Tongjun Yu Xuecheng Wei Hua Yang Jianping Wang Joint intelligent optimization design of the active region and electron blocking layer for AlGaN-based deep ultraviolet LEDs AIP Advances |
| title | Joint intelligent optimization design of the active region and electron blocking layer for AlGaN-based deep ultraviolet LEDs |
| title_full | Joint intelligent optimization design of the active region and electron blocking layer for AlGaN-based deep ultraviolet LEDs |
| title_fullStr | Joint intelligent optimization design of the active region and electron blocking layer for AlGaN-based deep ultraviolet LEDs |
| title_full_unstemmed | Joint intelligent optimization design of the active region and electron blocking layer for AlGaN-based deep ultraviolet LEDs |
| title_short | Joint intelligent optimization design of the active region and electron blocking layer for AlGaN-based deep ultraviolet LEDs |
| title_sort | joint intelligent optimization design of the active region and electron blocking layer for algan based deep ultraviolet leds |
| url | http://dx.doi.org/10.1063/5.0240168 |
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