Joint intelligent optimization design of the active region and electron blocking layer for AlGaN-based deep ultraviolet LEDs

Joint intelligent optimization design of the active region and electron blocking layer for AlGaN-based deep ultraviolet LEDs

Aiming to enhance the internal quantum efficiency (IQE) of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs), the active region based on the V-shaped quantum well (QW) and the electron-blocking layer (EBL) structure are jointly optimized using intelligent algorithms in this work. This me...

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Bibliographic Details
Main Authors: Jinglei Wang, Huimin Lu, Jianhua Ma, Yifan Zhu, Zihua Zhang, Tongjun Yu, Xuecheng Wei, Hua Yang, Jianping Wang
Format: Article
Language:English
Published: AIP Publishing LLC 2025-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0240168
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http://dx.doi.org/10.1063/5.0240168

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