CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications

CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications

Abstract HfOx‐based resistive random‐access‐memory (ReRAM) devices (TiN/Ti/HfOx/RuOx/TiN) are fabricated by CMOS‐compatible materials (ruthenium (Ru)) and lithography‐lite process, potentially enabling a maskless, etching‐free process that can be implemented in the low earth orbit (LEO), the Interna...

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Bibliographic Details
Main Authors: Yao‐Feng Chang, Yifu Huang, Chin‐Han Chung, Ying‐Chen Chen
Format: Article
Language:English
Published: Wiley-VCH 2025-06-01
Series:Advanced Electronic Materials
Subjects:
BEOL
emerging memory
memristor
RRAM
Online Access:https://doi.org/10.1002/aelm.202400823
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