CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications
Abstract HfOx‐based resistive random‐access‐memory (ReRAM) devices (TiN/Ti/HfOx/RuOx/TiN) are fabricated by CMOS‐compatible materials (ruthenium (Ru)) and lithography‐lite process, potentially enabling a maskless, etching‐free process that can be implemented in the low earth orbit (LEO), the Interna...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-06-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400823 |
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