Modeling Dual-SiO<sub>x</sub>N Thin-Film Edge Coupler with Ultra-Low Loss and Large Alignment Tolerance
High-performance facet couplers are essential components in the field of silicon nitride integrated photonic chips. In this work, a novel end-face coupling structure, using a double-layer SiO<sub>x</sub>N thin-film waveguide, is proposed. By precisely controlling the thickness and gap of...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-02-01
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| Series: | Photonics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2304-6732/12/2/136 |
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| Summary: | High-performance facet couplers are essential components in the field of silicon nitride integrated photonic chips. In this work, a novel end-face coupling structure, using a double-layer SiO<sub>x</sub>N thin-film waveguide, is proposed. By precisely controlling the thickness and gap of the SiO<sub>x</sub>N layers, we achieve flexible tuning of the output mode field size. This structure offers exceptional performance, including ultra-low coupling loss (TE: 0.29 dB, TM: 0.31 dB), large 3 dB alignment tolerance (±2.5 μm), and near-zero polarization-dependent loss. The optimized design strikes a favorable balance between coupling efficiency and alignment tolerance, making it well-suited for a wide range of photonic applications. |
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| ISSN: | 2304-6732 |