Optical Dispersion In Annealed Thin Films of S-doped a-Si:H Alloys
S-doped amorphous hydrogenated silicon (a-Si,S:H) thin films were prepared by conventional PECVD method on corning glass substrates. The prepared thin films were subsequently annealed in vacuum (~ 2 × 10 – 6 Torr) in the temperature range from 100 °C to 500 °C. The annealing effects at room temperat...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2013-03-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2013/1/articles/jnep_2013_V5_01020.pdf |
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