Optical Dispersion In Annealed Thin Films of S-doped a-Si:H Alloys

S-doped amorphous hydrogenated silicon (a-Si,S:H) thin films were prepared by conventional PECVD method on corning glass substrates. The prepared thin films were subsequently annealed in vacuum (~ 2 × 10 – 6 Torr) in the temperature range from 100 °C to 500 °C. The annealing effects at room temperat...

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Bibliographic Details
Main Authors: L.P. Purohit, H. Gupta, Pankaj K. Pal, A. Kumar, R. Kumar, R.M. Mehra
Format: Article
Language:English
Published: Sumy State University 2013-03-01
Series:Журнал нано- та електронної фізики
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Online Access:http://jnep.sumdu.edu.ua/download/numbers/2013/1/articles/jnep_2013_V5_01020.pdf
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